MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹1.93
26,12,850 in stock
FUXINSEMIDatasheet (PDF)
C2M0160120D
1.2kV 18A 125W 196mΩ 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs
TO-247-3RoHSActive
Silicon Carbide Power MOSFET N-Channel Enhancement Mode
- Manufacturer
- FUXINSEMI
- Manufacturer part #
- C2M0160120D
- Store part #
- C22365188
- Package / case
- TO-247-3
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
56 in stock
#C22365188
Stock & price checked 7 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹316.75 | ₹316.75 |
| 10+ | ₹268.06 | ₹2,680.60 |
| 30+ | ₹237.52 | ₹7,125.60 |
| 90+ | ₹206.26 | ₹18,563.40 |
| 510+ | ₹192.25 | ₹98,047.50 |
| 1,200+ | ₹186.13 | ₹2,23,356.00 |
1 × ₹316.75
₹316.75
excl. GST
₹373.77 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 30 per tube
C2M0160120D
₹316.75 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 1.2kV
- Output Capacitance(Coss)
- 55pF
- Current - Continuous Drain(Id)
- 18A
- Ciss-Input Capacitance
- 606pF
- Pd - Power Dissipation
- 125W
- Reverse Transfer Capacitance (Crss)
- 5pF
- RDS(on)
- 196mΩ
- Number
- 1 N-channel
- Gate Charge(Qg)
- 40nC
- Type
- N-Channel
- Gate Threshold Voltage (Vgs(th))
- 4V
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 1 (unlimited)
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 8.137 g
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