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HTCSEMIDatasheet (PDF)
HT36N900ADZ
900V 36A 125W Through Hole TO-247-3
TO-247-3ROHS CompliantActive
Silicon Carbide Power MOSFET N-Channel Enhancement Mode
- Manufacturer
- HTCSEMI
- Manufacturer part #
- HT36N900ADZ
- Store part #
- C47325507
- Package / case
- TO-247-3
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
30 in stock
#C47325507
Stock & price checked 24 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹786.01 | ₹786.01 |
| 10+ | ₹678.29 | ₹6,782.90 |
| 30+ | ₹612.54 | ₹18,376.20 |
| 90+ | ₹557.38 | ₹50,164.20 |
1 × ₹786.01
₹786.01
excl. GST
₹927.49 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 30 per tube
HT36N900ADZ
₹786.01 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 900V
- Current - Continuous Drain(Id)
- 36A
- Output Capacitance(Coss)
- 66pF
- Ciss-Input Capacitance
- 760pF
- Pd - Power Dissipation
- 125W
- Reverse Transfer Capacitance (Crss)
- 5pF
- RDS(on)
- 78mΩ
- Number
- 1 N-channel
- Gate Charge(Qg)
- 33nC
- Type
- N-Channel
- Gate Threshold Voltage (Vgs(th))
- 3.5V
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 8.42 g
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