MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
HUAYIDatasheet (PDF)
HYG055N08NS1P
N-Channel 80V 120A 187.5W Through Hole TO-220FB-3
TO-220FB-3ROHS CompliantActive
MOSFET N-CH 80V 120A TO-220FB-3
- Manufacturer
- HUAYI
- Manufacturer part #
- HYG055N08NS1P
- Store part #
- C2892077
- Package / case
- TO-220FB-3
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
6 in stock
#C2892077
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹74.97 | ₹74.97 |
| 10+ | ₹59.32 | ₹593.20 |
| 50+ | ₹50.63 | ₹2,531.50 |
| 100+ | ₹42.38 | ₹4,238.00 |
| 500+ | ₹38.47 | ₹19,235.00 |
| 1,000+ | ₹36.29 | ₹36,290.00 |
1 × ₹74.97
₹74.97
excl. GST
₹88.46 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
HYG055N08NS1P
₹74.97 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 1.54nF
- Ciss-Input Capacitance
- 3.66nF
- Pd - Power Dissipation
- 187.5W
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 80V
- Current - Continuous Drain(Id)
- 120A
- Reverse Transfer Capacitance (Crss)
- 15pF
- RDS(on)
- 6.8mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 60nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Active
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.84 g
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