MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
HUAYIDatasheet (PDF)
HYG064N08NA1P
N-Channel 80V 120A 208W Through Hole TO-220FB-3L
TO-220FB-3LROHS CompliantActive
MOSFET N-CH 80V 120A TO-220FB-3L
- Manufacturer
- HUAYI
- Manufacturer part #
- HYG064N08NA1P
- Store part #
- C5121334
- Package / case
- TO-220FB-3L
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
4 in stock
#C5121334
Stock & price checked 2 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹93.22 | ₹93.22 |
| 10+ | ₹76.87 | ₹768.70 |
| 40+ | ₹66.31 | ₹2,652.40 |
| 100+ | ₹58.34 | ₹5,834.00 |
| 500+ | ₹53.40 | ₹26,700.00 |
| 1,000+ | ₹50.82 | ₹50,820.00 |
1 × ₹93.22
₹93.22
excl. GST
₹110.00 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 20 per tube
HYG064N08NA1P
₹93.22 for 1 + GST
Specifications
- Drain to Source Voltage
- 80V
- Operating Temperature
- -55℃~+175℃
- Current - Continuous Drain(Id)
- 120A
- Ciss-Input Capacitance
- 3.08nF
- Pd - Power Dissipation
- 208W
- Reverse Transfer Capacitance (Crss)
- 205pF
- RDS(on)
- 6.4mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 65nC@10V
- Gate Threshold Voltage (Vgs(th))
- 3V
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Active
- Packaging
- Tube-packed
- Standard pack
- 20 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.8 g
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