Varnitronics
LM74800MDRRR TI
TI

LM74800MDRRR

10.5mV 20mA 65V 1 2.67A WSON-12(3x3) OR Controllers, Ideal Diodes RoHS

WSON-12(3x3)ROHS3 CompliantActive

Ideal Diode Controller Driving Back to Back N-FETs

Manufacturer
TI
Manufacturer part #
LM74800MDRRR
Store part #
C7216630
Package / case
WSON-12(3x3)
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

6,031 in stock

#C7216630

Stock & price checked 6 days ago

QuantityUnit pricePack price
1+₹941.82₹941.82
200+₹473.70₹94,740.00
500+₹463.31₹2,31,655.00
1,000+₹458.18₹4,58,180.00

1 × ₹941.82

₹941.82

excl. GST

₹1,111.35 incl. 18% GST

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  • GST invoice with every order
  • Standard pack: 3,000 per reel

LM74800MDRRR

₹941.82 for 1 + GST

Specifications

Quiescent Current
397uA
Operating temperature
-55℃~+150℃
FET Type
External Common Source FET
Voltage - Forward(Vf@If)
10.5mV
Current - Output High(IOH)
20mA
Input Voltage (Vin)
3V~65V
Voltage - DC Reverse(Vr)
65V
Gate Drive Voltage
13V
Function
Reverse current blocking;Reverse polarity protection;Overvoltage lockout;Under-voltage lockout;With enable
Number of Channels
1
Current - Output Low(IOL)
2.67A

Packaging & compliance

RoHS
ROHS3 Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Tape & Reel (TR)
Standard pack
3,000 / Reel
Sold per
Piece
Minimum order
1
Unit weight
0.2 g

Overview

The LM7480 ideal diode controller drives and controls external back to back N-channel MOSFETs to emulate an ideal diode rectifier with power path ON/OFF control and overvoltage protection. The wide input supply of 3 V to 65 V allows protection and control of 12-V and 24-V input powered systems. The device can withstand and protect the loads from negative supply voltages down to –65 V. An integrated ideal diode controller (DGATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. With a second MOSFET in the power path the device allows load disconnect (ON/OFF control) and overvoltage protection using HGATE control. The device features an adjustable overvoltage cut-off protection feature. LM7480 has two variants, LM74800 and LM74801. LM74800 employs reverse current blocking using linear regulation and comparator scheme versus LM74801, which supports a comparator based scheme. With common-drain configuration of the power MOSFETs, the mid-point can be utilized for ORing designs using another ideal diode. The LM7480 has a maximum voltage rating of 65 V. The loads can be protected from extended overvoltage transients like 200-V unsuppressed load dumps in 24-V battery systems by configuring the device with external MOSFETs in common source topology.

Applications

  • Sensors
  • Imaging
  • Radar
  • Active ORing for redundant power

Key features

  • Qualified for extended temperature applications – Device temperature: -55°C to +125°C ambient operating temperature range
  • 3-V to 65-V input range
  • Reverse input protection down to -65 V
  • Drives external back-to-back N-channel MOSFETs in common drain and common source configurations
  • Ideal diode operation with 10.5-mV A to C forward voltage drop regulation (LM74800)
  • Low reverse detection threshold (-4.5 mV) with fast response (0.5 μs)
  • 20-mA peak gate (DGATE) turnon current
  • 2.6-A peak DGATE turnoff current
  • Adjustable overvoltage protection
  • Low 2.87-μA shutdown current (EN/UVLO = Low)
  • Available in space saving 12-pin WSON package

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