MX5050TL10R25

MX5050TL10R25 is a power module integrating an ideal diode controller and a 100V 180A NMOS, designed to replace conventional Schottky diodes. Schottky diodes are widely used in power system design to provide protection under various input power fault conditions and to achieve system redundancy through paralleled power supplies. In automotive power system design, power Schottky diodes provide protection against battery reversal and various automotive electrical transients; industrial systems traditionally employ Schottky diodes for reverse polarity protection against field wiring errors, as well as immunity to lightning strikes and industrial surges. Common industrial systems, telecom servers, storage, and infrastructure equipment use Schottky diodes to provide system redundancy or increase power capacity through ORing circuits across two or more power supplies. However, the forward voltage drop of Schottky diodes causes significant power loss at high currents, requiring heat sinks and larger PCB area for thermal management, which reduces efficiency and increases system cost and footprint. As system power levels rise and power density requirements increase, Schottky diodes are no longer the preferred choice for next-generation high-performance system design. This module can replace high-power 30~100A, 100V Schottky diodes with a smaller form factor, higher reliability, lower voltage drop, reduced power dissipation, and faster reverse blocking response, improving the efficiency and performance of power ORing applications. The MX5050TL10R25 high-side OR-ing module is a power module comprising a 100V ideal diode controller and a 100V 2.5mΩ N-MOSFET, housed in a compact TOLL package. When connected in series with a power supply, it functions as an ideal diode rectifier. The module supports input voltages from 5V to 90V and can withstand transient voltages up to 100V. The MX5050TL10R25 high-side OR-ing module integrates an N-MOSFET that acts as an ideal diode rectifier when connected in series with the power supply. This OR-ing module enables the internal MOSFET to replace diode rectifiers in power distribution networks, reducing power loss and voltage drop. The MX5050TL10R25 provides a charge pump gate drive for the internal N-channel MOSFET and features a fast-response comparator that turns off the FET when current flows in reverse. The MX5050TL10R25 supports input voltages from 5V to 90V and can withstand transient voltages up to 100V.

Applications

• Multiple battery pack parallel connection
• Power tools
• E-bikes / electric-assisted bicycles
• Photovoltaic energy storage
• Server redundant power supply
• Active OR-ing for redundant (N+1) power supplies
• Single-channel reverse current prevention
• Dual-channel redundancy applications

Key features

• Wide input voltage range: 5V~90V
• Integrated 100V 180A NMOSFET
• Ultra-low VDS for fast reverse current turn-off
• Semiconductor package structure for high reliability
• Wide operating input voltage range VIN: 5V to 90V
• Integrated 100V 180A NMOS
• Charge pump gate driver for internal N-channel MOSFET
• Ultra-low VDS turn-off voltage minimizes turn-off time
• TOLL-8 package