TI
SN74LVC1G97DCKRSchmitt trigger 1.65V~5.5V 32mA 10uA 32mA 1 SOT-363-6 Gates and Inverters - Multi-Function, Configurable RoHS
From
₹22.04
30,010 in stock

Schmitt trigger 1.65V~5.5V 32mA 10uA 32mA 1 SOT-363-6 Gates and Inverters - Multi-Function, Configurable RoHS
Configurable Multiple-Function Gate
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12,565 in stock
#C7842
Stock & price checked 6 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 5+ | ₹17.16 | ₹85.80 |
| 50+ | ₹13.63 | ₹681.50 |
| 150+ | ₹11.87 | ₹1,780.50 |
| 500+ | ₹10.54 | ₹5,270.00 |
| 3,000+ | ₹9.49 | ₹28,470.00 |
| 6,000+ | ₹8.97 | ₹53,820.00 |
5 × ₹17.16
₹85.80
excl. GST
₹101.24 incl. 18% GST
SN74LVC1G58DCKR
₹85.80 for 5 + GST
This configurable multiple-function gate is designed for 1.65-V to 5.5-V VCC operation. The SN74LVC1G58 device features configurable multiple functions. The output state is determined by eight patterns of 3-bit input. The user can choose the logic functions AND, OR, NAND, NOR, XOR, inverter, and noninverter. All inputs can be connected to VCC or GND. This device functions as an independent gate, but because of Schmitt action, it may have different input threshold levels for positive-going (VT+) and negativegoing (VT-) signals. NanoFree™ package technology is a major breakthrough in IC packaging concepts, using the die as the package. This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down. These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
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| 74LVC1G58GW#C52140492MDD(Microdiode Semiconductor) · SOT-363 | MDD(Microdiode Semiconductor) | SOT-363 | 2,817 | ₹16.87 · 2,817 in stock | View | |
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