UCC27517ADBVR

The UCC27517A single-channel, high-speed, low-side gate driver device effectively drives MOSFET and IGBT power switches. Using a design that inherently minimizes shoot-through current, the UCC27517A sources and sinks high peak current pulses into capacitive loads, providing rail-to-rail drive capability with minimal propagation delay (13ns typical). The UCC27517A device can handle –5V voltages on the input. The UCC27517A provides 4A source and 4A sink (symmetrical drive) peak drive current at VDD = 12V. The UCC27517A is designed to operate over a wide VDD range of 4.5V to 18V and a wide temperature range of -40℃ to 140℃. An internal UVLO circuit on the VDD pin keeps the output low outside the VDD operating range. The ability to operate at low voltage levels such as 5V and below, combined with best-in-class switching characteristics, makes this device ideally suited for driving emerging wide-bandgap power switch devices such as GaN power semiconductors. The UCC27517A features a dual-input design that provides the flexibility to implement inverting (IN- pin) and non-inverting (IN+ pin) configurations using the same device. Either the IN+ or IN- pin can be used to control the state of the driver output. The unused input pin can be used for enable and disable functions. For protection purposes, internal pull-up and pull-down resistors on the input pins ensure the output is held low when an input pin is floating. Therefore, unused input pins must not be left floating and must be properly biased to ensure the driver output is enabled for normal operation. The input pin thresholds of the UCC27517A device are based on low-voltage logic compatible with TTL and CMOS, which are fixed and independent of the VDD supply voltage. The wide hysteresis between high and low thresholds provides excellent noise immunity.

Applications

• Switching mode power supplies
• DC-to-DC converters
• Companion gate driver devices for digital power controllers
• Solar, motor control, UPS
• Gate drivers for emerging wide-bandgap power devices (e.g., GaN)

Key features

• Low-cost gate driver, excellent alternative to NPN and PNP discrete solutions
• Symmetric 4A peak source and sink drive capability
• Handles negative voltage (-5V) on input
• Fast propagation delay (13ns typical)
• Fast rise and fall times (9ns and 7ns typical)
• 4.5V to 18V single-supply VDD
• Output held low during UVLO (ensures glitch-free pulse operation during power-up and power-down)
• TTL and CMOS compatible logic thresholds (independent of supply voltage)
• Hysteretic logic thresholds for high noise immunity
• Dual-input design (selectable inverting (IN- pin) or non-inverting (IN+ pin) driver configuration)
• Unused input pin can be used for enable/disable function
• Output held low when input pins are floating
• Input pin absolute maximum voltage level independent of VDD pin bias supply voltage
• Operating temperature range: -40℃ to +140℃
• 5-pin DBV (SOT-23) package option