UCC27517AQDBVRQ1

The UCC27517A-Q1 single-channel high-speed lowside gate-driver device effectively drives MOSFET and IGBT power switches. With a design that inherently minimizes shoot-through current, the UCC27517A-Q1 sources and sinks high peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay typically 13 ns. The UCC27517A-Q1 device handles -5V at input. The UCC27517A-Q1 provides 4-A source and 4-A sink (symmetrical drive) peak-drive current capability at VDD = 12V. The UCC27517A-Q1 operates over a wide VDD range of 4.5V to 18V and wide temperature range of -40°C to 140°C. Internal Undervoltage Lockout (UVLO) circuitry on VDD pin holds the output low outside VDD operating range. The ability to operate at low voltage levels such as below 5V, along with best-in-class switching characteristics, is especially suited for driving emerging wide band-gap powerswitching devices such as GaN power-semiconductor devices. UCC27517A-Q1 features a dual-input design which offers flexibility of implementing both inverting (IN– pin) and non-inverting (IN+ pin) configurations with the same device. Either the IN+ or IN– pin are used to control the state of the driver output. The unused input pin is used for the enable and disable functional. For protection purpose, internal pullup and pulldown resistors on the input pins ensure that outputs are held low when input pins are in floating condition. Hence the unused input pin is not left floating and must be properly biased to ensure that driver output is in enabled for normal operation. The input-pin threshold of the UCC27517A-Q1 device is based on TTL and CMOS compatible low-voltage logic which is fixed and independent of the VDD supply voltage. Wide hysteresis between the high and low thresholds offers excellent noise immunity.

Applications

• Automotive
• Switch-Mode Power Supplies
• DC-to-DC Converters
• Companion Gate-Driver Devices for Digital-Power Controllers
• Solar Power, Motor Control, UPS
• Gate Driver for Emerging Wide Band-Gap Power Devices (such as GaN)

Key features

• Qualified for Automotive Applications
• AEC-Q100 Qualified With the Following Results:
• Device Automotive Qualified Grade 1: -40°C to 125°C Ambient Operating Temperature Range
• Device HBM ESD Classification Level 2
• Device CDM ESD Classification Level C6
• Low-Cost Gate-Driver Device Offering Superior Replacement of NPN and PNP Discrete Solutions
• 4-A Peak-Source and Sink Symmetrical Drive
• Ability to Handle Negative Voltages (-5V) at Inputs
• Fast Propagation Delays (13-ns typical)
• Fast Rise and Fall Times (9-ns and 7-ns typical)
• 4.5 to 18-V Single-Supply Range
• Outputs Held Low During VDD UVLO (ensures glitch-free operation at power up and power down)
• TTL and CMOS Compatible Input-Logic Threshold (independent of supply voltage)
• Hysteretic-Logic Thresholds for High-Noise Immunity
• Dual Input Design (choice of an inverting (IN– pin) or non-inverting (IN+ pin) driver configuration)
• Unused Input Pin can be Used for Enable or Disable Function
• Output Held Low when Input Pins are Floating
• Input Pin Absolute Maximum Voltage Levels Not Restricted by VDD Pin Bias Supply Voltage
• Operating Temperature Range of -40°C to 140°C
• 5-Pin DBV (SOT-23) Package Option