SN74LVC2G241DCTR

This dual buffer and line driver is designed for 1.65V to 5.5V VCC operation. The SN74LVC2G241 device is designed to improve the performance and density of 3-state memory address drivers, clock drivers, and bus-oriented receivers and transmitters. NanoFree package technology represents a major breakthrough in IC packaging concepts by using the silicon die as the package. The SN74LVC2G241 device is organized as two 1-bit line drivers with separate output enable (1OE, 2OE) inputs. When 1OE is low and 2OE is high, the device passes data from the A inputs to the Y outputs. When 1OE is high and 2OE is low, the outputs are in the high-impedance state. To ensure the high-impedance state during power-up or power-down, OE should be connected to VCC through a pullup resistor and to GND through a pulldown resistor; the minimum value of this resistor is determined by the current-sinking or current-sourcing capability of the driver. This device is fully specified for partial-powerdown applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.

Applications

• AV receiver
• Blu-ray player and home theater
• DVD recorder and player
• Desktop or laptop computer
• Digital audio broadcast or internet radio player
• Digital video camera (DVC)
• Embedded computer
• GPS: personal navigation device
• Mobile internet device
• Network projector front-end
• Portable media player
• Professional audio mixer

Key features

• NanoFree package
• 5V VCC operation
• Input voltage up to 5.5V
• tpd max 4.1ns at 3.3V
• Low power consumption, ICC max 10μA
• ±24mA output drive at 3.3V
• VOLP (output ground bounce) typical <0.8V at VCC = 3.3V, TA = 25℃
• VOHV (output VOH undershoot) typical >2V at VCC = 3.3V, TA = 25℃
• Ioff supports hot insertion, partial power-down mode, and back-drive protection
• Suitable for down translation, converting input voltages up to 5.5V down to VCC level
• Latch-up performance exceeds JESD 78 Class II requirement of 100mA
• ESD protection exceeds JESD 22: 2000V HBM (A114-A), 200V MM (A115-A), 1000V CDM (C101)